型号:

DMN32D2LDF-7

RoHS:无铅 / 符合
制造商:Diodes Inc描述:MOSFET 2N-CH 30V 400MA SOT353
详细参数
数值
产品分类 分离式半导体产品 >> FET - 阵列
DMN32D2LDF-7 PDF
产品变化通告 Copper Bond Wire Change 3/May/2011
标准包装 3,000
系列 -
FET 型 2 个 N 沟道(双)
FET 特点 逻辑电平门
漏极至源极电压(Vdss) 30V
电流 - 连续漏极(Id) @ 25° C 400mA
开态Rds(最大)@ Id, Vgs @ 25° C 1.2 欧姆 @ 100mA,4V
Id 时的 Vgs(th)(最大) 1.2V @ 250µA
闸电荷(Qg) @ Vgs -
输入电容 (Ciss) @ Vds 39pF @ 3V
功率 - 最大 280mW
安装类型 表面贴装
封装/外壳 6-TSSOP(5 引线),SC-88A,SOT-353
供应商设备封装 SOT-353
包装 带卷 (TR)
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